Title :
Characterization of barrier height due to metal for Schottky barrier diode
Author :
Tayel, Mazhar B. ; El-Shawarby, Ayman M.
Author_Institution :
Alexandria Univ., Alexandria
Abstract :
Dynamic characterization of barrier height due to metal for Schottky barrier diode are presented. The device is modeled using a self-consistent model. The model is based on the solution of semiconductor transport equations from the surface to the bulk region. The model includes the effect of oxide thickness at the metal semiconductor interface SiO2/SiC; effective oxide charge at the interfacial layer included the fixed and mobile charges, and the effect of interface state charge density. A very good agreement between the simulated forward characteristics using the present model and published experimental data. The model is used to characterize the barrier height change due to metal of the Schottky contact.
Keywords :
Schottky diodes; semiconductor device models; silicon compounds; Schottky barrier diode; SiO2-SiC; barrier height characterization; interface state charge density; metal semiconductor interface; self-consistent model; semiconductor transport equation; Analytical models; Charge carrier processes; Current density; Interface states; Poisson equations; Schottky barriers; Schottky diodes; Semiconductor diodes; Semiconductor materials; Silicon carbide;
Conference_Titel :
Computer Engineering & Systems, 2007. ICCES '07. International Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-4244-1365-2
Electronic_ISBN :
978-1-1244-1366-9
DOI :
10.1109/ICCES.2007.4447057
