Title :
Giant tunneling magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junction with a synthetic ferrimagnetic pin layer annealed at and above 400Ã\x87¬C
Author :
Lee, Y. ; Hayakawa, J. ; Ikeda, S. ; Matsukura, F. ; Ohno, H.
Author_Institution :
Tohoku Univ., Sendai
Abstract :
This paper investigates the relationship between the tunneling magnetoresistance (TMR) ratio and the structure of MgO-based MTJs with crystallized CoFeB layers by annealing having CoFe/Ru/CoFeB synthetic ferrimagnet (SF) pin layers with varying Ru spacer thicknesses (tRu). When annealing temperature Ta is lower than 325degC, the Ta dependences of the TMR ratio are similar among all the MTJs. However, when Ta exceeds 325degC, which is the crystallization temperature of amorphous CoFeB electrodes, a remarkable difference in Ta dependence of the TMR ratio is observed between S-MTJ and and SF-MTJs.
Keywords :
annealing; boron alloys; cobalt alloys; ferrimagnetic materials; giant magnetoresistance; iron alloys; magnesium compounds; magnetic multilayers; tunnelling magnetoresistance; CoFeB-MgO; TMR ratio; amorphous electrodes; annealing; crystallization temperature; giant tunneling magnetoresistance; magnetic tunnel junction; spacer thicknesses; synthetic ferrimagnet pin layers; Amorphous materials; Annealing; Crystallization; Electrodes; Ferrimagnetic materials; Laboratories; Magnetic field measurement; Magnetic tunneling; Nanoelectronics; Tunneling magnetoresistance;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.374887
