Giant tunneling magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junction with a synthetic ferrimagnetic pin layer annealed at and above 400Ã\x87Â¬C

Author

Lee, Y. ; Hayakawa, J. ; Ikeda, S. ; Matsukura, F. ; Ohno, H.

Author_Institution

Tohoku Univ., Sendai

fYear

2006

fDate

8-12 May 2006

Firstpage

856

Lastpage

856

Abstract

This paper investigates the relationship between the tunneling magnetoresistance (TMR) ratio and the structure of MgO-based MTJs with crystallized CoFeB layers by annealing having CoFe/Ru/CoFeB synthetic ferrimagnet (SF) pin layers with varying Ru spacer thicknesses (t_Ru). When annealing temperature T_a is lower than 325degC, the T_a dependences of the TMR ratio are similar among all the MTJs. However, when T_a exceeds 325degC, which is the crystallization temperature of amorphous CoFeB electrodes, a remarkable difference in T_a dependence of the TMR ratio is observed between S-MTJ and and SF-MTJs.

Keywords

annealing; boron alloys; cobalt alloys; ferrimagnetic materials; giant magnetoresistance; iron alloys; magnesium compounds; magnetic multilayers; tunnelling magnetoresistance; CoFeB-MgO; TMR ratio; amorphous electrodes; annealing; crystallization temperature; giant tunneling magnetoresistance; magnetic tunnel junction; spacer thicknesses; synthetic ferrimagnet pin layers; Amorphous materials; Annealing; Crystallization; Electrodes; Ferrimagnetic materials; Laboratories; Magnetic field measurement; Magnetic tunneling; Nanoelectronics; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2006. INTERMAG 2006. IEEE International

Conference_Location

San Diego, CA

Print_ISBN

1-4244-1479-2

Type

conf

DOI

10.1109/INTMAG.2006.374887

Filename

4262289