DocumentCode
2948567
Title
Effect of dielectric film thickness on dielectric charging of RF MEMS capacitive switches
Author
Daigler, R. ; Papaioannou, G. ; Papandreou, E. ; Papapolymerou, J.
Author_Institution
School of ECE, Georgia Institute of Technology, Atlanta, 30332-0250, USA
fYear
2008
fDate
15-20 June 2008
Firstpage
1275
Lastpage
1278
Abstract
For the first time, the effects of dielectric film thickness in the dielectric charging process of RF MEMS capacitive switches is presented. Both MEMS switches and MIM capacitors are used to investigate charging phenomena. The contribution of charge injection and dipole orientation has been identified. An empirical law that allows the prediction of stored charge on the film thickness was drawn. Above room temperature, the dependence of thermally stimulated depolarization current on a certain activation energy that is independent of dielectric film thickness allows the inclusion of this behavior in modeling tools.
Keywords
Capacitance; Capacitance-voltage characteristics; Dielectric films; MIM capacitors; Microswitches; Physics; Radiofrequency microelectromechanical systems; Silicon; Switches; Voltage; Dielectric materials; MIM devices; microelectromechanical devices; reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location
Atlanta, GA, USA
ISSN
0149-645X
Print_ISBN
978-1-4244-1780-3
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2008.4633292
Filename
4633292
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