DocumentCode :
2948567
Title :
Effect of dielectric film thickness on dielectric charging of RF MEMS capacitive switches
Author :
Daigler, R. ; Papaioannou, G. ; Papandreou, E. ; Papapolymerou, J.
Author_Institution :
School of ECE, Georgia Institute of Technology, Atlanta, 30332-0250, USA
fYear :
2008
fDate :
15-20 June 2008
Firstpage :
1275
Lastpage :
1278
Abstract :
For the first time, the effects of dielectric film thickness in the dielectric charging process of RF MEMS capacitive switches is presented. Both MEMS switches and MIM capacitors are used to investigate charging phenomena. The contribution of charge injection and dipole orientation has been identified. An empirical law that allows the prediction of stored charge on the film thickness was drawn. Above room temperature, the dependence of thermally stimulated depolarization current on a certain activation energy that is independent of dielectric film thickness allows the inclusion of this behavior in modeling tools.
Keywords :
Capacitance; Capacitance-voltage characteristics; Dielectric films; MIM capacitors; Microswitches; Physics; Radiofrequency microelectromechanical systems; Silicon; Switches; Voltage; Dielectric materials; MIM devices; microelectromechanical devices; reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2008.4633292
Filename :
4633292
Link To Document :
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