• DocumentCode
    2948567
  • Title

    Effect of dielectric film thickness on dielectric charging of RF MEMS capacitive switches

  • Author

    Daigler, R. ; Papaioannou, G. ; Papandreou, E. ; Papapolymerou, J.

  • Author_Institution
    School of ECE, Georgia Institute of Technology, Atlanta, 30332-0250, USA
  • fYear
    2008
  • fDate
    15-20 June 2008
  • Firstpage
    1275
  • Lastpage
    1278
  • Abstract
    For the first time, the effects of dielectric film thickness in the dielectric charging process of RF MEMS capacitive switches is presented. Both MEMS switches and MIM capacitors are used to investigate charging phenomena. The contribution of charge injection and dipole orientation has been identified. An empirical law that allows the prediction of stored charge on the film thickness was drawn. Above room temperature, the dependence of thermally stimulated depolarization current on a certain activation energy that is independent of dielectric film thickness allows the inclusion of this behavior in modeling tools.
  • Keywords
    Capacitance; Capacitance-voltage characteristics; Dielectric films; MIM capacitors; Microswitches; Physics; Radiofrequency microelectromechanical systems; Silicon; Switches; Voltage; Dielectric materials; MIM devices; microelectromechanical devices; reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2008 IEEE MTT-S International
  • Conference_Location
    Atlanta, GA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-1780-3
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2008.4633292
  • Filename
    4633292