DocumentCode
2948600
Title
Low RA tunnel-junctions with MgO-Barrier
Author
Langer, J. ; Ocker, B. ; Maass, W.
Author_Institution
Singulus Technol. AG, Kahl
fYear
2006
fDate
8-12 May 2006
Firstpage
859
Lastpage
859
Abstract
The utilization of MgO as tunnel barrier gave a new boost in the investigation of tunnel-junctions for storage and sensing applications. This paper discusses the deposition technique and the magnetic, electrical, and structural properties of MgO.
Keywords
magnesium compounds; magnetic sensors; magnetic storage; magnetic tunnelling; sputter deposition; MgO; MgO-barrier; deposition technique; electrical properties; magnetic properties; magnetic sensing; magnetic storage; sputter deposition; structural properties; tunnel barrier; tunnel-junctions; Aluminum oxide; Annealing; Magnetic properties; Magnetic separation; Oxidation; Plasma properties; Plasma temperature; Size measurement; Sputtering; Torque;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location
San Diego, CA
Print_ISBN
1-4244-1479-2
Type
conf
DOI
10.1109/INTMAG.2006.374890
Filename
4262292
Link To Document