DocumentCode :
2948609
Title :
High-Q RF MEMS capacitor with digital/analog tuning capabilities
Author :
Grichener, Alex ; Lakshminarayanan, Balaji ; Rebeiz, Gabriel M.
Author_Institution :
Electrical and Computer Engineering Department, University of California, San Diego 92122, USA
fYear :
2008
fDate :
15-20 June 2008
Firstpage :
1283
Lastpage :
1286
Abstract :
This paper presents an RF MEMS switchedcapacitor suitable for tunable filters and reconfigurable matching networks. The switched-capacitor contains design features that result in a tunable capacitance ratio of 5–7, a high-Q (≫ 100) at C to X-band frequencies, and excellent reliability performance. The switched-capacitor has been temperature cycled to 120° C with only a 3–4 V change in the pull-down voltage. The design also features a digital switched-capacitor mode and an analog tuning mode, making it ideal for precision tuning.
Keywords :
Capacitance; Capacitors; Dielectrics; Electrodes; Filters; Radio frequency; Radiofrequency microelectromechanical systems; Structural beams; Switches; Voltage; RF MEMS; reconfigurable network; reliability; tunable capacitors; tunable filters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2008.4633294
Filename :
4633294
Link To Document :
بازگشت