DocumentCode
2948613
Title
Effect Of Adjacent Layers on Crystallization and Magnetoresistance in CoFeB/MgO/CoFeB Magnetic Tunnel Junction
Author
Park, C. ; Wang, Y. ; Zhu, J.
Author_Institution
Carnegie Mellon Univ., Pittsburgh
fYear
2006
fDate
8-12 May 2006
Firstpage
860
Lastpage
860
Abstract
In this paper, we present the experimental results of our investigation into annealing effects of adjacent layers of CoFeB on the structural and transport properties of sputtered CoFeB/MgO/CoFeB MTJs.
Keywords
boron alloys; cobalt alloys; crystallisation; iron alloys; magnesium compounds; magnetic annealing; magnetic tunnelling; magnetoresistance; CoFeB-MgO-CoFeB; adjacent layers; annealing effects; crystallization; magnetic tunnel junction; magnetoresistance; sputtered MTJ; structural properties; transport properties; Amorphous magnetic materials; Annealing; Crystallization; Magnetic devices; Magnetic field measurement; Magnetic properties; Magnetic tunneling; Radio frequency; Sputtering; Tunneling magnetoresistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location
San Diego, CA
Print_ISBN
1-4244-1479-2
Type
conf
DOI
10.1109/INTMAG.2006.374891
Filename
4262293
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