DocumentCode :
2948613
Title :
Effect Of Adjacent Layers on Crystallization and Magnetoresistance in CoFeB/MgO/CoFeB Magnetic Tunnel Junction
Author :
Park, C. ; Wang, Y. ; Zhu, J.
Author_Institution :
Carnegie Mellon Univ., Pittsburgh
fYear :
2006
fDate :
8-12 May 2006
Firstpage :
860
Lastpage :
860
Abstract :
In this paper, we present the experimental results of our investigation into annealing effects of adjacent layers of CoFeB on the structural and transport properties of sputtered CoFeB/MgO/CoFeB MTJs.
Keywords :
boron alloys; cobalt alloys; crystallisation; iron alloys; magnesium compounds; magnetic annealing; magnetic tunnelling; magnetoresistance; CoFeB-MgO-CoFeB; adjacent layers; annealing effects; crystallization; magnetic tunnel junction; magnetoresistance; sputtered MTJ; structural properties; transport properties; Amorphous magnetic materials; Annealing; Crystallization; Magnetic devices; Magnetic field measurement; Magnetic properties; Magnetic tunneling; Radio frequency; Sputtering; Tunneling magnetoresistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
Type :
conf
DOI :
10.1109/INTMAG.2006.374891
Filename :
4262293
Link To Document :
بازگشت