DocumentCode
2948627
Title
Reduction of the bias dependence in MgO-based magnetic tunnel junctions
Author
Shen, W. ; Mazumdar, D. ; Liu, X. ; Zou, X. ; Schrag, B.D. ; Xiao, G.
Author_Institution
Brown Univ., Providence
fYear
2006
fDate
8-12 May 2006
Firstpage
861
Lastpage
861
Abstract
In this paper, we have fabricated and studied the bias dependence of magnetic tunnel junctions based on a CoFeB / MgO / CoFeB tri-layer structure. These structures exhibit TMR ratios as high as 236% at room temperature. Furthermore, we have observes a weakened dependence of TMR on bias voltage in these structures, with the MR ratio decaying to one half of the zero-bias value at an applied voltage close to 1 V.
Keywords
boron alloys; cobalt alloys; iron alloys; magnesium compounds; magnetic multilayers; tunnelling magnetoresistance; CoFeB-MgO-CoFeB; MR ratio; bias dependence reduction; magnetic tunnel junctions; temperature 293 K to 298 K; trilayer structure; Amorphous magnetic materials; Annealing; Crystallization; Magnetic sensors; Magnetic tunneling; Network address translation; Physics; Temperature; Tunneling magnetoresistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location
San Diego, CA
Print_ISBN
1-4244-1479-2
Type
conf
DOI
10.1109/INTMAG.2006.374892
Filename
4262294
Link To Document