Title :
Magnetic and electrical properties of magnetic tunnel junctions with radical oxidized MgO barriers
Author :
Oh, S. ; Jeong, J. ; Nam, K. ; Lee, J. ; Kim, Heonhwan ; Park, S. ; Kim, Heonhwan ; Chung, U. ; Moon, J.
Author_Institution :
Samsung Electron. Co. Ltd., Yongin
Abstract :
This paper aims to investigate the magnetic and electrical properties of magnetic tunnel junctions with MgO barriers. The magnetoresistance of the junction is measured at 0.4 V. Results show a magnetoresistance of almost the same values at varying radical oxidation time and Mg thickness. It is also confirmed in this study that the MgO formed by radical oxidation of Mg shows high magnetoresistance as compared to the conventional RF deposited MgO barriers.
Keywords :
boron alloys; cobalt alloys; free radical reactions; iron alloys; magnesium compounds; magnetic multilayers; manganese alloys; oxidation; platinum alloys; ruthenium; tantalum; tunnelling magnetoresistance; Mg; PtMn-CoFe-Ru-CoFeB-MgO-CoFeB-Ta - Interface; RF deposited barriers; magnetic tunnel junctions; magnetoresistance; radical oxidation; voltage 0.4 V; Electrodes; Kinetic energy; Magnetic properties; Magnetic semiconductors; Magnetic tunneling; Oxidation; Plasma applications; Plasma properties; Radio frequency; Size measurement;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.374893
