Title :
A 1.2 V 3.1–10.6 GHz CMOS low noise amplifier with 24 dB gain and 2.4 dB noise figure
Author_Institution :
Sch. of Optoelectron., Beijing Inst. of Technol., Beijing, China
Abstract :
This paper presents a 3.1-10.6 GHz low noise amplifier (LNA) for ultra-wideband (UWB) applications. The proposed wideband amplifier comprises a single-ended resistor feedback LNA with wideband input matching and a single-to-differential voltage buffer which improves the power gain of the amplifier. The LNA achieves a 23.2 dB voltage gain and input return loss below -13 dB from 3.1-10.6 GHz, 2.4 dB and 2.7 dB minimum and maximum noise figure (NF), and -11.9 dBm IIP3 at 6 GHz. The proposed LNA is realized in 0.13 ¿m CMOS technology and occupies 0.32 mm2 area. The power consumption is 12.2 mW with 1.2 V supply.
Keywords :
CMOS integrated circuits; MMIC amplifiers; buffer circuits; circuit noise; feedback amplifiers; low noise amplifiers; resistors; ultra wideband technology; CMOS low noise amplifier; IIP3; frequency 3.1 GHz to 10.6 GHz; gain 2.4 dB; gain 2.7 dB; input return loss; power 12.2 mW; single-ended resistor feedback LNA; single-to-differential voltage buffer; size 0.13 mum; ultra-wideband applications; voltage 1.2 V; wideband amplifier; wideband input matching; Broadband amplifiers; CMOS technology; Feedback; Gain; Impedance matching; Low-noise amplifiers; Noise figure; Resistors; Ultra wideband technology; Voltage; CMOS; Ultra wideband(UWB); feedback; low-noise amplifier (LNA);
Conference_Titel :
Wireless Communications & Signal Processing, 2009. WCSP 2009. International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-4856-2
Electronic_ISBN :
978-1-4244-5668-0
DOI :
10.1109/WCSP.2009.5371445
