High power on-wafer capabilities of a time domain load-pull setup

High power LSNA on-wafer measurements up to 20 Watts at 2 GHz have been performed on a 3.2 mm gate width AlGaN/GaN HEMT. Time domain slopes in pulsed mode are given for different pulsed drain voltages, showing the importance to monitor the drain voltage and current slopes, as they are directly linked to the transistor reliability. At such power range, the LSNA on-wafer load-pull setup with two dasiawave probespsila couplers demonstrates its capabilities to handle up-to-date power transistors in the S band, and to provide the time domain information usually missing with classical load-pull setups.