Title :
Ultrafast optically induced reflectivity switching at a gallium-silica interface
Author :
Rode, A.V. ; Luther-Davis, B. ; Samoc, M. ; MacDonald, K. ; Zheludev, N.I.
Author_Institution :
Laser Phys. Centre, Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
Summary form only given. It was reported recently that the reflectivity of a gallium-silica interface held close to, but below, the gallium melting point of 29.8/spl deg/C can be changed significantly (>40%) by light over a very broad spectral range 400-1600 nm. The effect has been attributed to a surface-assisted phase transition from the stable /spl alpha/-gallium phase to a phase of metallic nature. In this paper we present the results on the ultrafast switching dynamics of a gallium-silica interface.
Keywords :
gallium; high-speed optical techniques; reflectivity; silicon compounds; surface phase transformations; 29.8 C; 400 to 1600 nm; Ga-SiO/sub 2/; gallium-silica interface; optical reflectivity; surface phase transition; ultrafast switching dynamics; Electrodes; Optical waveguides; Reflectivity; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
DOI :
10.1109/CLEOE.2000.909905
