Effects of deep ocean pressure on active semiconductor devices

The effects of high pressure on the performance of active semiconductor devices are determined by both the number of times the device is exposed to the pressure and the duration of this exposure. The damage that results from either or both types of exposure is of three types; (1) structural damage, (2) physical device damage and (3) chemical damage. The anticipated effects of each damage category on the device to be tested dictated the test procedure for that device. Included in the testing procedures is failure analysis of all failed devices. Test procedures are described, test results are given and pressure-induced failure modes are identified for (1) small signal and power transistors in hermetic, plastic and epoxy packages, (2) junction field effect transistors in epoxy packages, (3) integrated circuit (IC) operational amplifiers in plastic and ceramic packages, (4) IC power supplies, (5) digital ICs and (6) resistors. Finally, a list is provided of devices that have a demonstrated ability to operate at deep ocean pressures.