DocumentCode :
2949392
Title :
Analysis of a novel n-AlGaAs hot-electron optical modulator
Author :
Ryvkin, B.S. ; Walker, A.C. ; Avrutin, E.A.
Author_Institution :
Dept. of Phys., Heriot-Watt Univ., Edinburgh, UK
fYear :
2000
fDate :
10-15 Sept. 2000
Abstract :
Summary form only given. We propose and analyse a device solution for optical interconnections based on the mechanism of the variation of interband optical absorption by current-induced carrier heating. The solution proposed makes use of electron heating in moderately n-doped III-V materials, particularly AlGaAs with a significant content of Al. Although the effect is not construction specific, the most immediate intended application is in a surface normal reflective modulator - for example, by applying the voltage signal to interdigited electrodes located on the surface of the material.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; hot carriers; optical interconnections; AlGaAs; III-V material; electron heating; interband optical absorption; interdigited electrodes; n-AlGaAs hot electron optical modulator; optical interconnection; surface normal reflective modulator; Absorption; Building materials; Electron optics; Heating; III-V semiconductor materials; Modular construction; Optical devices; Optical interconnections; Optical materials; Optical modulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
Type :
conf
DOI :
10.1109/CLEOE.2000.909916
Filename :
909916
Link To Document :
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