Analysis of a novel n-AlGaAs hot-electron optical modulator

Summary form only given. We propose and analyse a device solution for optical interconnections based on the mechanism of the variation of interband optical absorption by current-induced carrier heating. The solution proposed makes use of electron heating in moderately n-doped III-V materials, particularly AlGaAs with a significant content of Al. Although the effect is not construction specific, the most immediate intended application is in a surface normal reflective modulator - for example, by applying the voltage signal to interdigited electrodes located on the surface of the material.