Title :
Switching Current Fluctuation And Repeatability for MRAM with Propeller Shape MTJ
Author :
Shimomura, N. ; Yoda, H. ; Ikegawa, S. ; Kai, T. ; Amano, M. ; Aikawa, H. ; Ueda, T. ; Asao, Y. ; Hosotani, K. ; Shimizu, Y. ; Tsuchida, K.
Author_Institution :
Corp. Resarch & Dev. Center, Kawasaki
Abstract :
In this paper, a write error rate, when the function test on this magnetic tunnel junctions (MTJ) is continued repeatedly, is estimated from the write margin and switching current fluctuation. This paper also reveals how the write sequence influences these results.The switching current fluctuation is strongly dependent on the turn-on sequence, which is related to the magnetization reversal mode.
Keywords :
current fluctuations; magnetic storage; magnetic tunnelling; magnetisation reversal; magnetoresistive devices; random-access storage; magnetization reversal; magnetoresistive random access memory; propeller shape magnetic tunnel junctions; switching current fluctuation; turn-on sequence; write error rate; write margin; Circuit testing; Error analysis; Error correction codes; Fluctuations; Magnetic tunneling; Magnetoresistance; Propellers; Random access memory; Shape; Switches;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.374953
