A passively mode-locked semiconductor diode laser with a ring cavity

Author

Desbiens, L. ; Langlois, P. ; Yesayan, A. ; Piche, M.

Author_Institution

Dept. de Physique, Laval Univ., Que., Canada

fYear

2000

fDate

10-15 Sept. 2000

Abstract

Summary form only given. Mode-locked semiconductor diode lasers are compact and simple sources of short optical pulses that are well suited for a number of applications. In this paper we present our experimental results showing that picosecond pulses have been reliably generated with a semiconductor diode laser operated with a ring cavity. An angle etched travelling-wave amplifier (InGaAs) designed to be operated at 860 nm was used as the active medium. The mode-locked operation was purely passive and it produced an average power of 3 mW per beam.

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; laser cavity resonators; laser mode locking; laser transitions; ring lasers; semiconductor lasers; 3 mW; 860 nm; InGaAs; active medium; angle etched travelling-wave amplifier; average power; passively mode-locked semiconductor diode laser; picosecond pulses; ring cavity; semiconductor diode laser; short optical pulses; Etching; Laser mode locking; Optical amplifiers; Optical pulse generation; Optical pulses; Pulse amplifiers; Ring lasers; Semiconductor device reliability; Semiconductor diodes; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on

Conference_Location

Nice

Print_ISBN

0-7803-6319-1

Type

conf

DOI

10.1109/CLEOE.2000.909931

Filename

909931