Studies on the carrier transport in InGaAlAsP-InGaAsP quantum well structures emitting at 1.3 /spl mu/m

Summary form only given. Interwell carrier distribution is a process of major importance for the operation of multiple quantum well (MQW) lasers. In this work we examine a novel approach to improve high temperature performance in the InGaAsP lasers by adding aluminium to the barrier, which allows one to increase conduction band offset. To find optimal heterostructure parameters, different barrier material compositions have been examined in structures with InGaAsP compressively strained wells and tensile strained InGaAlAsP barriers. The MQW structures were fabricated by low pressure MOVPE. They contained four period transport-MQWs emitting at 1.3 /spl mu/m. The interwell carrier transport was measured by time resolved photoluminescence (PL) in a specially designed structures.