Title :
Saturation of intense THz-radiation power from femtosecond-laser irradiated InAs in a high magnetic field
Author :
Ohtake, H. ; Ono, Shintaro ; Sakai, Masayuki ; Liu, Zhe ; Sarukara, N.
Author_Institution :
Inst. for Molecular Sci., Aichi, Japan
Abstract :
Summary form only given. We have investigated the intense THz radiation from InAs by applying a strong magnetic field up to 5T. The sample was non-doped bulk InAs with a [100] surface. A mode-locked Ti:sapphire laser was used for an excitation source. A liquid-helium-cooled Si bolometer was provided for detection. We show magnetic field dependence of the THz-radiation intensity. To obtain more detailed information, we took spectra by a polarizing Michelson interferometer. We show the center frequency at each magnetic field.
Keywords :
III-V semiconductors; Michelson interferometers; bolometers; high-speed optical techniques; indium compounds; laser beam effects; laser mode locking; magneto-optical effects; optical saturation; submillimetre wave generation; 5 T; InAs; Si; THz-radiation intensity; [100] surface; center frequency; excitation source; femtosecond-laser irradiated InAs; high magnetic field; intense THz radiation; intense THz-radiation power saturation; liquid-helium-cooled Si bolometer; magnetic field; magnetic field dependence; mode-locked Ti:sapphire laser; non-doped bulk InAs; polarizing Michelson interferometer; strong magnetic field; Electrons; Magnetic analysis; Magnetic fields; Optical pulses; Power lasers; Reflectivity; Saturation magnetization; Solids;
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
DOI :
10.1109/CLEOE.2000.909934
