Title :
Magnetic Configuration of A New Memory Cell Utilizing Domain Wall Motion
Author :
Numata, H. ; Tahara, S.
Author_Institution :
NEC Corp., Sagamihara
Abstract :
A new type of memory cell that uses domain wall motion is described. The magnetic configurations were revealed using a simulation, and were observed by a magnetic force microscope (MFM). The cell includes a magnetic tunnel junction (MTJ). The cell have two magnetization states, and they correspond to the domain wall position. The advantage of this memory cell is that the voltage stress to the tunnel barrier and the reading disturbance to the stored data are less than the general spin-injected MTJ cells.
Keywords :
magnetic domain walls; magnetic force microscopy; magnetic storage; magnetic tunnelling; magnetisation; magnetoelectronics; MFM; domain wall motion; domain wall position; magnetic configurations; magnetic force microscope; magnetic tunnel junction; magnetization states; memory cell; reading disturbance; spin-injected MTJ cells; tunnel barrier; voltage stress; Magnetic domain walls; Magnetic domains; Magnetic force microscopy; Magnetic separation; Magnetic tunneling; Magnetization; National electric code; Polarization; Threshold current; Wires;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.374964
