Title :
Widely tunable GaInAsSb/GaAlAsSb quantum well continuous wave lasers for gas analysis above RT
Author :
Vicet, A. ; Yarekha, D.A. ; Glastre, Genevieve ; Perona, A. ; Fraisse, B. ; Barmaov, A.N.
Author_Institution :
Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
Summary form only given. Narrow ridge GaInSbAs/GaAlSbAs strained quantum well lasers have been fabricated by molecular beam epitaxy. At room temperature (RT) the lasers had threshold currents in the range of 20-40 mA and emitted up to 40 mW/facet of optical power at 2.25-2.28 /spl mu/m. They operated in the fundamental spatial mode and exhibited single frequency emission with the side longitudinal mode suppression reaching 20 dB in a large range of currents. The lasers operated in continuous wave (cw) regime up to 130/spl deg/C. We were able to tune the emission wavelength in a very large range of 0.18 /spl mu/m using a resistance heater instead of a Peltier cooler.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beam applications; laser modes; laser tuning; quantum well lasers; spectrochemical analysis; 130 C; 2.25 to 2.28 micron; 20 to 40 mA; 40 mW; GaInSbAs-GaAlSbAs; GaInSbAs/GaAlSbAs quantum well laser; Peltier cooler; continuous wave operation; fundamental spatial mode; gas analysis; molecular beam epitaxy; optical power; resistance heater; room temperature; side longitudinal mode suppression; single frequency emission; temperature tuning; threshold current; Frequency; Laser modes; Laser tuning; Molecular beam epitaxial growth; Power lasers; Quantum well lasers; Stimulated emission; Temperature distribution; Threshold current; Tunable circuits and devices;
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
DOI :
10.1109/CLEOE.2000.909944
