DocumentCode
2949805
Title
Noise Modeling Including Effect of propagation along the gate of a field-effect transistor
Author
Balti, M. ; Samet, A. ; Pasquet, D. ; Bourdel, E.
Author_Institution
Lab. SysCom, ENIT, Tunis
fYear
2005
fDate
11-14 Dec. 2005
Firstpage
1
Lastpage
4
Abstract
The transistors with large gate width are not really used by microwave circuit, because of the propagation phenomena problems and thermal dissipation (thermal noise). But the usefully frequencies becomes increasingly high, so the current short transistors will be affected by the propagation phenomena. This large width transistor noise analysis is fault of measurements limits beyond 18 GHz.
Keywords
MMIC; fault diagnosis; field effect transistors; semiconductor device noise; thermal noise; current short transistors; field-effect transistor; microwave circuit; noise analysis; noise modeling; propagation effect; thermal dissipation; thermal noise; Circuit faults; Circuit noise; Frequency; Integrated circuit measurements; Microwave FETs; Microwave circuits; Microwave propagation; Microwave transistors; Noise figure; Noise measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2005. ICECS 2005. 12th IEEE International Conference on
Conference_Location
Gammarth
Print_ISBN
978-9972-61-100-1
Electronic_ISBN
978-9972-61-100-1
Type
conf
DOI
10.1109/ICECS.2005.4633408
Filename
4633408
Link To Document