DocumentCode :
2950092
Title :
Recipe synthesis for PECVD SiO2 films using neural networks and genetic algorithms
Author :
Han, Seung-Soo ; May, Gary S.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
1996
fDate :
28-31 May 1996
Firstpage :
855
Lastpage :
860
Abstract :
Silicon dioxide films deposited by plasma-enhanced chemical vapor deposition PECVD) are useful as interlayer dielectrics for metal-insulator structures such as multichip modules. Due to the complex nature of particle dynamics within a plasma, it is difficult to determine the exact nature of the relationship between PECVD process conditions and their effects on critical output parameters. In this study, neural network process models are used in conjunction with genetic algorithms to determine the necessary process recipes to achieve novel film qualities. To characterize the PECVD process, SiO2 films deposited in a plasma-Therm 700 series PECVD system under varying conditions are analyzed using a central composite experimental design. Parameters varied include substrate temperature, pressure, RF power, silane flow and nitrous oxide flow. Data from this experiment is used to train back-propagation neural networks to model deposition rate, refractive index, permittivity, film stress, wet etch rate, uniformity, silanol concentration, and water concentration. A recipe synthesis procedure is then performed using genetic algorithms, Powell´s algorithm, the simplex method, and hybrid combinations thereof to generate the necessary deposition conditions to obtain novel film qualities, including zero residual stress, 0% non-uniformity, 0% impurities, and low permittivity. Recipes predicted by these techniques are verified by experiment, and the performance of each synthesis method is compared
Keywords :
backpropagation; dielectric thin films; etching; feedforward neural nets; genetic algorithms; metal-insulator boundaries; multichip modules; permittivity; plasma CVD; refractive index; silicon compounds; PECVD; Powell´s algorithm; RF power; SiO2; back-propagation neural networks; deposition rate; film stress; genetic algorithms; interlayer dielectrics; metal-insulator structures; multichip modules; nitrous oxide flow; permittivity; plasma-enhanced chemical vapor deposition; process recipes; recipe synthesis; refractive index; silane flow; silanol concentration; substrate temperature; uniformity; water concentration; wet etch rate; Genetic algorithms; Neural networks; Optical films; Permittivity; Plasma applications; Plasma chemistry; Plasma temperature; Residual stresses; Semiconductor films; Silicon compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 1996. Proceedings., 46th
Conference_Location :
Orlando, FL
ISSN :
0569-5503
Print_ISBN :
0-7803-3286-5
Type :
conf
DOI :
10.1109/ECTC.1996.550508
Filename :
550508
Link To Document :
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