DocumentCode
2950173
Title
Photoresist polymeric materials for 157 nm photolithography
Author
Sarantopoulou, E. ; Cefalas, A.C. ; Gogolides, Evangelos ; Argitis, P.
Author_Institution
Theor. & Phys. Chem. Inst., Nat. Hellenic Res. Found., Athens, Greece
fYear
2000
fDate
10-15 Sept. 2000
Abstract
Summary form only given. In this communication we are reporting results from the absorbance and the outgassing studies for photoresist candidates for 157 nm lithography. Several materials have been studied for their absorption below 200 nm, and one typical epoxy novolac material, and one t-boc protected acrylate are studied for outgassing, as a first contribution on this subject.
Keywords
outgassing; photoresists; polymer films; ultraviolet lithography; 157 nm; VUV lithography; absorbance; epoxy novolac; outgassing; photoresist; polymeric material; t-boc protected acrylate; Absorption; Atom lasers; Chemical lasers; Chemistry; Laser applications; Laser theory; Lithography; Optical materials; Polymer films; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location
Nice
Print_ISBN
0-7803-6319-1
Type
conf
DOI
10.1109/CLEOE.2000.909966
Filename
909966
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