Perspective of CMOS technology

In Si-LSI industry, the variation of device characteristics has been one of the issues, and it has been continuously developing the several methods to mitigate and straighten out it. Currently, the local and random variation has been still the critical issue, compared to the global variation and the systematic one. The main mechanisms in that variation can be line edge roughness (LER) and random dopant fluctuation (RDF). Both LER and RDF are related to a lot of process technologies. In order to analyze the relationship between this variation and process technology and to reduce the variation, we should develop the new analysis methods for variations in <;50nm CMOS devices and the new control methods. I will present the current status of variations and variation mechanisms, and discusses future requirements for the advanced CMOS-LSI.