DocumentCode
2950791
Title
New power MOSFET selection method to avoid failures
Author
Jordán, J. ; Esteve, V. ; García-Gil, R. ; Sanchis, E. ; Maset, E. ; Dede, E.
Author_Institution
Dept. d´´Enginyeria Electron., Valencia Univ., Spain
Volume
2
fYear
2004
fDate
2004
Firstpage
1257
Abstract
Power MOSFET are the primary cause of failure at high power inverters. The turning on of the parasitic bipolar transistor during hard turn off of the intrinsic body diode causes the failures. We propose to test MOSFET from different manufacturers under controlled laboratory conditions. The worst switching condition and the most robust MOSFET was then identified.
Keywords
bipolar transistors; capacitor switching; diodes; failure analysis; invertors; power MOSFET; semiconductor device manufacture; semiconductor device testing; bipolar transistor; high power inverter failure; intrinsic body diode; power MOSFET selection method; Bipolar transistors; Diodes; Inverters; Laboratories; MOSFET circuits; Manufacturing; Power MOSFET; Robustness; Testing; Turning;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 2004. APEC '04. Nineteenth Annual IEEE
Print_ISBN
0-7803-8269-2
Type
conf
DOI
10.1109/APEC.2004.1295984
Filename
1295984
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