Carbon nanotube field effect transistor models performance and evaluation

This paper presents a comparison between different models that have studied the effects of several parameter scaling on the performance of Carbon Nano Tube Field Effect Transistors. This evaluation for the studied models, with regard to the scaling effects, is to determine those which best reflect the very essence of Carbon Nano Tubes. Whereas the models subject this comparison (Fettoy, Roy, Stanford, and Southampton) are affected to varying degrees due to such parametric variations, the Stanford model is shown as still being valid for a wide range of chirality and diameters; a model that is also applicable for circuit simulations. Simulations show that the Southampton model was more realistic considering the non-ideality of the carbon nanotube, also with less computational efforts. Results leveraging our findings in this ongoing research endeavor reveal that many research efforts were not efficient to high degree due to high delay and not valid for circuit simulations.