Metallization development and application for aluminum nitride substrates

Author

Yamamoto, Hiroaki ; Kurokawa, Yasuhiro ; Shimada, Yuzo ; Kamata, Tohru

Author_Institution

NEC Corp., Kawasaki, Japan

fYear

1989

fDate

22-24 May 1989

Firstpage

23

Lastpage

28

Abstract

The aluminum nitride (AlN) substrate, a promising candidate for improved heat dissipation in microcircuits, has several excellent characteristics at room temperature, such as high thermal conductivity, over 10 times that for alumina (Al₂O₃), a thermal expansion coefficient close to that of silicon, high electrical insulating capacity, low dielectric constant and loss, good mechanical properties, and nontoxicity. A thick-film conductor-resistor paste system with excellent performance consisting of ZnO-B₂O₃-SiO₂ glass frits has been developed. In addition to the thick-film-paste system, Ni metallization on AlN substrates has been developed using Ni paste that can be fired in a nitrogen atmosphere at 1300°C. AlN, with its 260 W/mK thermal conductivity, is compatible with 99.5% BeO for high-power semiconductor packages

Keywords

aluminium compounds; hybrid integrated circuits; integrated circuit technology; metallisation; nickel; substrates; thick film circuits; 1300 degC; AlN substrate; BeO substrate; Ni metallization; Ni paste; ZnO-B₂O₃-SiO₂ glass frits; dielectric constant; electrical insulating capacity; high-power semiconductor packages; mechanical properties; metallization development; microcircuit heat dissipation; nitrogen atmosphere; nontoxic; room temperature; thermal conductivity; thermal expansion coefficient; thick-film conductor-resistor paste system; Aluminum nitride; Dielectric constant; Dielectrics and electrical insulation; Metallization; Resistance heating; Silicon; Substrates; Temperature; Thermal conductivity; Thermal expansion;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components Conference, 1989. Proceedings., 39th

Conference_Location

Houston, TX

Type

conf

DOI

10.1109/ECC.1989.77723

Filename

77723