Title :
Metallization development and application for aluminum nitride substrates
Author :
Yamamoto, Hiroaki ; Kurokawa, Yasuhiro ; Shimada, Yuzo ; Kamata, Tohru
Author_Institution :
NEC Corp., Kawasaki, Japan
Abstract :
The aluminum nitride (AlN) substrate, a promising candidate for improved heat dissipation in microcircuits, has several excellent characteristics at room temperature, such as high thermal conductivity, over 10 times that for alumina (Al2O3), a thermal expansion coefficient close to that of silicon, high electrical insulating capacity, low dielectric constant and loss, good mechanical properties, and nontoxicity. A thick-film conductor-resistor paste system with excellent performance consisting of ZnO-B2O3 -SiO2 glass frits has been developed. In addition to the thick-film-paste system, Ni metallization on AlN substrates has been developed using Ni paste that can be fired in a nitrogen atmosphere at 1300°C. AlN, with its 260 W/mK thermal conductivity, is compatible with 99.5% BeO for high-power semiconductor packages
Keywords :
aluminium compounds; hybrid integrated circuits; integrated circuit technology; metallisation; nickel; substrates; thick film circuits; 1300 degC; AlN substrate; BeO substrate; Ni metallization; Ni paste; ZnO-B2O3-SiO2 glass frits; dielectric constant; electrical insulating capacity; high-power semiconductor packages; mechanical properties; metallization development; microcircuit heat dissipation; nitrogen atmosphere; nontoxic; room temperature; thermal conductivity; thermal expansion coefficient; thick-film conductor-resistor paste system; Aluminum nitride; Dielectric constant; Dielectrics and electrical insulation; Metallization; Resistance heating; Silicon; Substrates; Temperature; Thermal conductivity; Thermal expansion;
Conference_Titel :
Electronic Components Conference, 1989. Proceedings., 39th
Conference_Location :
Houston, TX
DOI :
10.1109/ECC.1989.77723
