Title :
3-Dimensional and damage-free neutral beam etching for MEMS applications
Author :
Wada, Atsushi ; Kubota, Takahide ; Yanagisawa, Yoshinori ; Altansukh, B. ; Samukawa, Seiji ; Ono, Takahito ; Miwa, Kenichiro
Author_Institution :
Inst. of Fluid Sci., Tohoku Unicersity, Sendai, Japan
Abstract :
To fabricate high reliability Micro Electro Mechanical Systems (MEMS) devices, damage-free etching with high aspect three-dimensional (3D) structure is important. Plasma etching resulted in profile anomaly near high aspect 3D structure due to distortion of ion trajectory by distortion of ion sheath and degradation of mechanical property of MEMS devices due to defect generation by UV irradiation, respectively. Conversely, neutral beam was found to be a favorable technique to realize precise and damage-free etching for high aspect ratio and 3D MEMS structure.
Keywords :
etching; microfabrication; micromechanical devices; 3D MEMS structure; MEMS applications; damage free neutral beam etching; high aspect three-dimensional structure; microelectromechanical systems device fabrication; three dimensional etching; Etching; Micromechanical devices; Niobium; Plasmas; Q factor; Radiation effects; Silicon;
Conference_Titel :
Sensors, 2012 IEEE
Conference_Location :
Taipei
Print_ISBN :
978-1-4577-1766-6
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2012.6411442
