A Si/SiGe HBT timing generator IC for high-bandwidth impulse radio applications

Author

Rowe, D. ; Pollack, B. ; Pulver, J. ; Chon, W. ; Jett, P. ; Fullerton, L. ; Larson, L.

Author_Institution

Wireless Commun., Sierra Monolithics, Redondo Beach, CA, USA

fYear

1999

fDate

1999

Firstpage

221

Lastpage

224

Abstract

A precise timing generator is presented which forms the heart of a wideband impulse radio or radar system. The circuit is implemented in a 45 GHz Si/SiGe HBT technology, and can produce a pulse inside a 100 ns window with an accuracy of 2 ps and a jitter of less than 10 ps. The integrated circuit contains a mixture of analog, digital, and RF functions, consumes 0.5 W, and operates at a clock rate of up to 2.5 GHz

Keywords

Ge-Si alloys; bipolar integrated circuits; elemental semiconductors; heterojunction bipolar transistors; land mobile radio; mixed analogue-digital integrated circuits; pulse generators; semiconductor materials; silicon; timing jitter; 0.5 W; 100 ns; 2.5 GHz; 45 GHz; HBT timing generator IC; RF functions; Si-SiGe; clock rate; high-bandwidth impulse radio; impulse radar system; jitter; mixed-signal ICs; Analog integrated circuits; Germanium silicon alloys; Heart; Heterojunction bipolar transistors; Integrated circuit technology; Jitter; Pulse circuits; Radar; Silicon germanium; Timing;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits, 1999. Proceedings of the IEEE 1999

Conference_Location

San Diego, CA

Print_ISBN

0-7803-5443-5

Type

conf

DOI

10.1109/CICC.1999.777278

Filename

777278