Title :
Converting an SRAM from bulk Si to partially depleted SOI
Author :
Wood, Michael ; Smith, George ; Pennings, John
Author_Institution :
IBM Mid Hudson Valley High Performance Design Center, Poughkeepsie, NY, USA
Abstract :
The conversion of an existing standard cell compatible SRAM macro to a partially depleted SOI process is described. The issues discovered in the conversion were: changed coupling capacitance and noise analysis, history effects in the sense amplifier, setup and hold time analysis and thermal effects. For each of these effects the steps taken to meet functionality requirements are explained
Keywords :
CMOS memory circuits; SRAM chips; integrated circuit design; integrated circuit noise; silicon-on-insulator; SRAM; coupling capacitance; functionality requirements; hold time analysis; noise analysis; partially depleted SOI; sense amplifier; setup time analysis; thermal effects; CMOS process; Capacitance; Copper; Coupling circuits; Decoding; Delay; History; Random access memory; Silicon on insulator technology; Turning;
Conference_Titel :
Custom Integrated Circuits, 1999. Proceedings of the IEEE 1999
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5443-5
DOI :
10.1109/CICC.1999.777279
