DocumentCode :
2952026
Title :
Crystalline carbon nitride films coherently grown on Si[100] substrates by reactive pulsed laser ablation
Author :
Banicca, G. ; Elia, L. ; Fernandez, M. ; Luches, A. ; Majni, G. ; Martino, M. ; Mengucci, P.
Author_Institution :
Dipt. di Sci. dei Mater. e della Terra, Ancona Univ., Italy
fYear :
2000
fDate :
10-15 Sept. 2000
Abstract :
Summary form only. The prediction of a covalently bound carbon nitride solid /spl beta/-C/sub 3/N/sub 4/ with characteristics (hardness, bulk modulus) comparable to or even better than those of diamond, stimulated many attempts to synthesise and deposit thin films of this material. Pulsed laser ablation is among the most promising technique to achieve this result.
Keywords :
X-ray diffraction; carbon compounds; optical films; pulsed laser deposition; /spl beta/-C/sub 3/N/sub 4/; C/sub 3/N/sub 4/; Si; Si[100] substrates; bulk modulus; coherently grown; covalently bound carbon nitride; crystalline carbon nitride films; diamond; hardness; pulsed laser ablation; reactive pulsed laser ablation; thin films; Crystallization; Optical pulses; Pulsed laser deposition; Semiconductor films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
Type :
conf
DOI :
10.1109/CLEOE.2000.910075
Filename :
910075
Link To Document :
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