A fully integrated differential 5-6GHz LNA with on-chip balun for WLAN applications

Author

El-Gharniti, O. ; Kerhervé, Eric ; Bégueret, Jean-Baptiste ; Belot, Didier

Author_Institution

Microelectron. IXL Lab., Univ. of Bordeaux, Bordeaux

fYear

2005

fDate

11-14 Dec. 2005

Firstpage

1

Lastpage

4

Abstract

We present the design of an integrated differential low noise amplifier (LNA) for WLAN applications in the 5-6 GHz range using a SiGe BiCMOS process. The output and input of the amplifier are matched internally to 50 Omega. The amplifier includes an input and output balun. EM-simulation is used to design these baluns. The LNA exhibits 15.7 dB power gain, while the noise figure is lower than 2.23 dB. The PldB is -12.2 dBm and the power consumption from a single 1.8 V is 24.8 mW.

Keywords

BiCMOS integrated circuits; MMIC amplifiers; baluns; low noise amplifiers; silicon compounds; wireless LAN; BiCMOS process; EM-simulation; SiGe; WLAN application; frequency 5 GHz to 6 GHz; gain 15.7 dB; integrated differential LNA; low noise amplifier; on-chip balun; power 24.8 mW; resistance 50 ohm; voltage 1.8 V; BiCMOS integrated circuits; Differential amplifiers; Energy consumption; Gain; Germanium silicon alloys; Impedance matching; Low-noise amplifiers; Noise figure; Silicon germanium; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2005. ICECS 2005. 12th IEEE International Conference on

Conference_Location

Gammarth

Print_ISBN

978-9972-61-100-1

Electronic_ISBN

978-9972-61-100-1

Type

conf

DOI

10.1109/ICECS.2005.4633547

Filename

4633547