Auger recombination heating and hot phonon effect in semiconductor optical amplifiers

Author

Fehr, J.-N. ; Hessler, T.P. ; Marti, D. ; Selbmann, P.E. ; Dupertuis, M.-A. ; Deveaud, B. ; Emery, J.-Y. ; Dagens, B.

Author_Institution

Dept. of Phys., Swiss Fed. Inst. of Technol., Lausanne, Switzerland

fYear

2000

fDate

10-15 Sept. 2000

Abstract

Summary form only. Few investigations on carrier density and temperature distribution of semiconductor optical amplifiers (SOA) have been performed despite their importance for gain and recovery times. We study the dependencies of these quantities on various parameters such as applied current, injected optical signal power, and active layer geometry. To get information on both density and temperature of the carriers, we performed spontaneous emission (SE) measurements.

Keywords

Auger effect; carrier density; electron-hole recombination; hot carriers; phonons; semiconductor optical amplifiers; spontaneous emission; temperature distribution; 1.55 mum; Auger recombination heating; active layer geometry; applied current; carrier density; hot phonon effect; injected optical signal power; laser gain; recovery times; semiconductor optical amplifiers; spontaneous emission measurements; temperature distribution; Charge carrier density; Geometrical optics; Heating; Performance evaluation; Performance gain; Phonons; Radiative recombination; Semiconductor optical amplifiers; Stimulated emission; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on

Conference_Location

Nice

Print_ISBN

0-7803-6319-1

Type

conf

DOI

10.1109/CLEOE.2000.910081

Filename

910081