Title :
Electrical noise characterisation of n-type-doped distributed Bragg mirrors
Author :
Belleville, G. ; Signoret, P. ; Orsal, B. ; Wintrebert-Fouquet, M. ; Plais, A. ; Jacquet, J.
Author_Institution :
Centre d´Electron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
Summary form only. When we measure the electrical noise in VCSELs manufactured with DBR structure, we notice a generation-recombination shape. We can thus determine through static and electrical noise characteristics of distributed Bragg reflectors the conduction mechanism of electrons in VCSEL mirrors. n-GaAs-AlAs mirrors present a higher resistance and more interface defects than n-InGaAsP-InP ones. By modelling the current noise spectral density of one reflecting interface, we can directly predict the electrical noise level of DBRs used in VCSELs.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; electric noise measurement; gallium arsenide; laser mirrors; laser noise; semiconductor lasers; surface emitting lasers; DBR structure; GaAs-AlAs; InGaAsP-InP; VCSEL; VCSEL mirrors; VCSELs; conduction mechanism; current noise spectral density; distributed Bragg reflectors; electrical noise; electrical noise characterisation; electrical noise characteristics; electrical noise level; generation-recombination shape; higher resistance; interface defects; n-GaAs-AlAs mirrors; n-InGaAsP-InP; n-type-doped distributed Bragg mirrors; reflecting interface; static noise characteristics; Distributed Bragg reflectors; Electric variables measurement; Electrical resistance measurement; Mirrors; Noise generators; Noise level; Noise measurement; Noise shaping; Shape measurement; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
DOI :
10.1109/CLEOE.2000.910083
