Optical and electrical low-frequency noise and their correlation in InGaAsP MQW lasers

Author

Simmons, J.G. ; Smetona, S. ; Evans, J.D. ; Matukas, J. ; Pralgauskaite, S. ; Palenskis, V.

Author_Institution

Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada

fYear

2000

fDate

10-15 Sept. 2000

Abstract

Summary form only. We presents results of an ongoing comprehensive study of the electrical and optical low-frequency (1Hz-20 kHz) noise of MQW InGaAsP laser, and their correlation over wide current and temperature ranges. The lasers under investigation were of a ridge waveguide, graded-index, separate-confinement heterostructure (GRINSCH), multiple-quantum-well Fabry-Perot (F-P) type structure. Optical and electrical low-frequency noise spectral density dependencies have been measured under continuous-wave (CW) constant-current operation.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser noise; laser variables measurement; quantum well lasers; ridge waveguides; semiconductor device noise; waveguide lasers; 1 Hz to 20 kHz; CW constant-current operation; Fabry-Perot lasers; GRINSCH; InGaAsP; InGaAsP MQW lasers; electrical low-frequency noise; graded-index; low-frequency noise spectral density dependencies; optical low-frequency noise; optical noise; ridge waveguide; separate-confinement heterostructure; Density measurement; Electric variables measurement; Fabry-Perot; Laser noise; Low-frequency noise; Optical noise; Optical waveguides; Quantum well devices; Temperature distribution; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on

Conference_Location

Nice

Print_ISBN

0-7803-6319-1

Type

conf

DOI

10.1109/CLEOE.2000.910087

Filename

910087