DocumentCode
2952523
Title
Growth of GaInNAs/GaAs quantum well lasers by plasma-assisted molecular beam epitaxy
Author
Pan, Z. ; Li, L.H. ; Zhang, W. ; Lin, Y.W. ; Wu, R.H.
Author_Institution
Nat. Res. Center for Optoelectron. Technol., Acad. Sinica, Beijing, China
fYear
2000
fDate
10-15 Sept. 2000
Abstract
Summary form only given. We studied in detail the growth of GaInNAs/GaAs by an ion-removed DC plasma-assisted MBE. Based on the experimental results, a kinetic model taking into account the nitrogen desorption and surface segregation was established to analyze the incorporation behavior of nitrogen. Optimum growth conditions of GaInNAs were obtained and GaInNAs/GaAs QW lasers have been achieved.
Keywords
III-V semiconductors; desorption; gallium arsenide; molecular beam epitaxial growth; quantum well lasers; rapid thermal annealing; semiconductor growth; surface segregation; wide band gap semiconductors; GaInNAs-GaAs; N; RTA effect; crystal quality; ion-removed DC plasma; kinetic model; nitrogen desorption; optimum growth conditions; plasma-assisted MBE; quantum well lasers; surface segregation; Electrons; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Nitrogen; Plasmas; Quantum well lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location
Nice
Print_ISBN
0-7803-6319-1
Type
conf
DOI
10.1109/CLEOE.2000.910103
Filename
910103
Link To Document