• DocumentCode
    2952584
  • Title

    Suppression of self-heating effect employing bulk vertical-channel bipolar junction transistor (BJT) type capacitorless 1T-DRAM cell

  • Author

    Imamoto, Takuya ; Endoh, Tetsuo

  • Author_Institution
    Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
  • fYear
    2013
  • fDate
    7-10 Oct. 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Excellent thermal characteristics of the bulk vertical-channel bipor junction transistor (BJT) type 1T-DRAM compared to the SOI planar type with 20nm generation. The bulk vertical type can operate with the low increase of lattice temperature (ΔTLmax) of 26K and high enough read current margin of 1.8μA/cell, while the SOI planar type shows large ΔTLmax value of 58K.
  • Keywords
    DRAM chips; bipolar transistors; silicon-on-insulator; SOI planar type; bipolar junction transistor; bulk vertical-channel BJT-type capacitorless 1T-DRAM cell; read current margin; self-heating effect suppression; size 20 nm; temperature 26 K; temperature 58 K; Junctions; Lattices; Logic gates; MOSFET; Random access memory; Silicon-on-insulator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
  • Conference_Location
    Monterey, CA
  • Type

    conf

  • DOI
    10.1109/S3S.2013.6716574
  • Filename
    6716574
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2952584