Title :
Vmin=0.4 V LSIs are the real with silicon-on-thin-buried-oxide (SOTB) — How is the application with "Perpetuum-Mobile" micro-controller with SOTB?
Author :
Sugii, Nobuyuki ; Iwamatsu, Takanori ; Yamamoto, Yusaku ; Makiyama, Hideki ; Shinohara, Hirofumi ; Oda, Hidekazu ; Kamohara, Shiro ; Yamaguchi, Yoshio ; Ishibashi, Koji ; Mizutani, Tomoko ; Hiramoto, Toshiro
Author_Institution :
Low-power Electron. Assoc. & Project (LEAP), Tsukuba, Japan
Abstract :
Ultralow-voltage (ULV) CMOS will be a core building block of highly energy efficient electronics. Although the near- or sub-Vth operation is effective in reducing energy per operation of CMOS circuits, its slow operation speed can miss a chance to be used in many applications. The silicon-on-thin-buried-oxide (SOTB) CMOS is a strong candidate for the ul-tralow-power (ULP) electronics because of its small variability and back-bias control. This paper describes our results on the ULV operation of SRAM and ring oscillator (RO) circuits and shows the operation speed is now sufficiently high for many ULP applications. The “Perpetuum-Mobile” micro-controllers operating at ~0.4 V are expected to be implemented in many applications such as the internet of things.
Keywords :
CMOS integrated circuits; SRAM chips; buried layers; large scale integration; low-power electronics; microcontrollers; silicon-on-insulator; Internet of Things; LSIs; SRAM; perrpetuum-mobile microcontroller; ring oscillator circuits; silicon-on-thin-buried-oxide; ultralow-power electronics; ultralow-voltage CMOS; voltage 0.4 V; CMOS integrated circuits; Delays; Energy efficiency; Internet; Random access memory; Silicon; Transistors;
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/S3S.2013.6716576
