Title :
Substrate injection and crosstalk in CMOS circuits
Author :
Briaire, J. ; Krisch, K.S.
Abstract :
Substrate noise injection is evaluated, at the transistor level, for a 0.25 μm CMOS technology, to determine the mechanisms that contribute to substrate crosstalk. Impact ionization current and capacitive coupling from the drain and source junctions are found to be the most significant contributors to substrate current injection. Their relative importance is evaluated for an inverter, and is shown to depend upon loading and on the frequency of operation
Keywords :
CMOS integrated circuits; crosstalk; impact ionisation; integrated circuit noise; leakage currents; mixed analogue-digital integrated circuits; substrates; 0.25 micron; CMOS circuits; GIDL; capacitive coupling; gate induced drain leakage; impact ionization current; inverter; loading; operation frequency; substrate crosstalk; substrate current injection; substrate noise injection; Analog circuits; CMOS technology; Coupling circuits; Crosstalk; Current measurement; Impact ionization; Inverters; Length measurement; MOSFETs; Silicon;
Conference_Titel :
Custom Integrated Circuits, 1999. Proceedings of the IEEE 1999
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5443-5
DOI :
10.1109/CICC.1999.777327
