Title :
Global variability of UTBB MOSFET in subthreshold
Author :
Makovejev, S. ; Esfeh, B. Kazemi ; Andrieu, F. ; Raskin, Jean-Pierre ; Flandre, Denis ; Kilchytska, V.
Author_Institution :
ICTEAM Inst., Univ. catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
Global variability of UTBB MOSFETs in subthresh-old and off regimes is analyzed. Variability of the off-state drain current, subthreshold slope, DIBL, gate leakage current, threshold voltage and their correlations are considered. It is demonstrated that subthreshold drain current variability is not only dependent on the threshold voltage variability, but the effective body factor (incorporating short-channel effects) must also be taken into account.
Keywords :
MOSFET; leakage currents; DIBL; UTBB MOSFET; effective body factor; gate leakage current; global variability; off-state drain current; subthreshold slope; threshold voltage variability; Correlation; Correlation coefficient; Logic gates; MOSFET; Temperature; Temperature dependence; Threshold voltage;
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/S3S.2013.6716585
