"Switching of high-power current pulses up to 250 kA and submillisecond duration using new silicon devices-reverse switched dinistors"

Author

Galakhov, I.V. ; Gudov, S.N. ; Kirillov, G.A. ; Murugov, V.M. ; Osin, V.M. ; Zolotovski, V.I. ; Chumakov, G.N. ; Kovtun, V.I. ; Martynenko, V.A. ; Larson, D.

Author_Institution

Russian Federal Nucl. Centre-VNIIEF, Nizhni Novgorod, Russia

Volume

2

fYear

1995

fDate

3-6 July 1995

Firstpage

1103

Abstract

Power switches based on silicon semiconductor devices-reverse switched dinistors are proposed to switch high-power pulsed currents of microsecond and submillisecond duration. The switch design is described for the operating voltage of up to 25 kV and operating current of up to 200 kA with the current pulses duration of 500 /spl mu/s at 0.11/sub max/. The authors give the test results and estimate the possibility of using such a switch in the NIF capacitor bank.

Keywords

elemental semiconductors; power capacitors; power semiconductor switches; power supplies to apparatus; pulse generators; pulsed power switches; semiconductor device testing; silicon; switching; 200 kA; 25 kV; 500 mus; NIF power capacitor bank; Si; current pulse duration; high-power pulsed current switching; operating current; operating voltage; reverse switched dinistors; silicon semiconductor devices; switch design; Electrodes; Gas discharge devices; Physics; Plasma devices; Pulse power systems; Semiconductor devices; Silicon; Switches; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Pulsed Power Conference, 1995. Digest of Technical Papers., Tenth IEEE International

Conference_Location

Albuquerque, NM, USA

Print_ISBN

0-7803-2791-8

Type

conf

DOI

10.1109/PPC.1995.599761

Filename

599761