DocumentCode :
2953003
Title :
Modeling the benefits of using a thick bottom oxide gated MOSFET (WFET™) with increased switching performance in the high side of a nonisolated buck converter
Author :
Brown, Jess
Author_Institution :
Vishay Siliconix, Bracknell, UK
Volume :
3
fYear :
2004
fDate :
2004
Firstpage :
1864
Abstract :
This paper explores the benefits of using a thick bottom oxide gate structure (WFET™) MOSFET for the high-side switch in a buck converter. Generic equations to calculate switching times are presented, and these are compared against practical measurements.
Keywords :
DC-DC power convertors; power MOSFET; switching convertors; WFET; generic equations; nonisolated buck converter; switching performance; switching time calculation; thick bottom oxide gated MOSFET; Buck converters; Capacitance; DC-DC power converters; Equations; MOSFET circuits; Manufacturing processes; Packaging; Silicon; Switches; Switching converters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2004. APEC '04. Nineteenth Annual IEEE
Print_ISBN :
0-7803-8269-2
Type :
conf
DOI :
10.1109/APEC.2004.1296121
Filename :
1296121
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2953003
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