• DocumentCode
    2953003
  • Title

    Modeling the benefits of using a thick bottom oxide gated MOSFET (WFET™) with increased switching performance in the high side of a nonisolated buck converter

  • Author

    Brown, Jess

  • Author_Institution
    Vishay Siliconix, Bracknell, UK
  • Volume
    3
  • fYear
    2004
  • fDate
    2004
  • Firstpage
    1864
  • Abstract
    This paper explores the benefits of using a thick bottom oxide gate structure (WFET™) MOSFET for the high-side switch in a buck converter. Generic equations to calculate switching times are presented, and these are compared against practical measurements.
  • Keywords
    DC-DC power convertors; power MOSFET; switching convertors; WFET; generic equations; nonisolated buck converter; switching performance; switching time calculation; thick bottom oxide gated MOSFET; Buck converters; Capacitance; DC-DC power converters; Equations; MOSFET circuits; Manufacturing processes; Packaging; Silicon; Switches; Switching converters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition, 2004. APEC '04. Nineteenth Annual IEEE
  • Print_ISBN
    0-7803-8269-2
  • Type

    conf

  • DOI
    10.1109/APEC.2004.1296121
  • Filename
    1296121
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2953003