An extended bipolar transistor model for substrate crosstalk analysis

Author

Klemme, M. ; Barke, Erich

Author_Institution

Inst. of Microelectron. Syst., Hannover Univ., Germany

fYear

1999

fDate

1999

Firstpage

579

Lastpage

582

Abstract

Substrate crosstalk phenomena are of upcoming importance for the layout verification process. Approaches exist for the analysis of far-distance interference of integrated devices and also for the simulation of short-distance disturbances. For a real three-dimensional simulation of several tens of transistors, the use of a device simulator is unfeasible. By using SPICE or a derivative it is possible to simulate three-dimensionally extracted layout areas. This paper presents the use of an extended bipolar transistor model. It is derived from the bjt503, also known as the Mextram transistor model. The main extension is the use of more than one substrate contact to model the connection to the surrounding substrate material

Keywords

BiCMOS integrated circuits; bipolar integrated circuits; bipolar transistors; crosstalk; equivalent circuits; integrated circuit layout; integrated circuit modelling; mixed analogue-digital integrated circuits; semiconductor device models; substrates; 3D simulation; Mextram transistor model; bjt503; extended bipolar transistor model; extracted layout areas; layout verification process; substrate contact; substrate crosstalk analysis; three-dimensional simulation; Analytical models; BiCMOS integrated circuits; Bipolar transistors; Circuit simulation; Crosstalk; Integrated circuit modeling; Interference; Microelectronics; Space technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits, 1999. Proceedings of the IEEE 1999

Conference_Location

San Diego, CA

Print_ISBN

0-7803-5443-5

Type

conf

DOI

10.1109/CICC.1999.777348

Filename

777348