Fabrication of quantum Hall devices for low magnetic fields

Author

Pierz, K. ; Schumacher, B.

Author_Institution

Phys. Tech. Bundesanstalt, Braunschweig, Germany

fYear

1998

fDate

6-10 July 1998

Firstpage

339

Lastpage

340

Abstract

The quantized Hall resistance of a two-dimensional electron gas (2DEG) in AlGaAs/GaAs heterostructures is used for the realization of the unit of resistance. With respect to an application in magnets with lower fields, we have produced such devices with carrier concentrations even below 3/spl middot/10/sup 15/ m/sup -2/ and checked their metrological quality.

Keywords

Hall effect devices; III-V semiconductors; aluminium compounds; carrier density; electric resistance measurement; gallium arsenide; measurement standards; molecular beam epitaxial growth; quantum Hall effect; semiconductor epitaxial layers; semiconductor growth; two-dimensional electron gas; AlGaAs-GaAs; AlGaAs/GaAs heterostructures; MBE; carrier concentration; low magnetic fields; metrological quality; quantized Hall resistance; quantum Hall devices fabrication; resistance unit; two-dimensional electron gas; Conductivity; Electrical resistance measurement; Electrons; Fabrication; Gallium arsenide; Magnetic field measurement; Magnetic fields; Magnets; Molecular beam epitaxial growth; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements Digest, 1998 Conference on

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5018-9

Type

conf

DOI

10.1109/CPEM.1998.699940

Filename

699940