DocumentCode
2953484
Title
Profile of second-order nonlinearity and charge distribution induced in thermally poled fused silica
Author
Guillet de Chatellus, H. ; Montant, S. ; Freysz, E.
Author_Institution
Centre de Phys. Moleculaire Optique et Hertzienne, Bordeaux I Univ., Talence, France
fYear
2000
fDate
10-15 Sept. 2000
Abstract
Summary form only given. Thermally induced second-order susceptibility located beneath the anodic surface over a 10 /spl mu/m thick layer has been measured in thermally poled fused silica glasses. For many practical applications, one need to largely control the profile and the location of /spl chi/. We propose a non destructive method that allow us to infer the profile and location of the nonlinear area and makes it possible to deduce the charge distribution induced within the poled glass sample. The fused silica samples were poled at -350/spl deg/C and applying a DC voltage of 3.5 kV. A SHG signal was generated within the poled samples utilizing two non-collinear 120 fs pulses making a small angle /spl Theta/ between them.
Keywords
dielectric polarisation; high-speed optical techniques; nonlinear optical susceptibility; optical glass; optical harmonic generation; optical phase matching; silicon compounds; space charge; /spl chi/; 10 mum; 120 fs; 3.5 kV; 350 C; DC voltage; SHG signal; SiO/sub 2/; anodic surface; charge distribution; fused silica sample; non destructive method; noncollinear femtosecond pulses; nonlinear area; poled glass sample; poled samples; second-order nonlinearity; thermally induced second-order susceptibility; thermally poled fused silica; Erbium; Hafnium; Impurities; Interference; Niobium; Nonlinear optics; Optical harmonic generation; Particle beam optics; Scanning electron microscopy; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location
Nice
Print_ISBN
0-7803-6319-1
Type
conf
DOI
10.1109/CLEOE.2000.910158
Filename
910158
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