• DocumentCode
    2953869
  • Title

    A low-noise 900 MHz VCO in 0.6 /spl mu/m CMOS

  • Author

    Chan-Hong Park ; Beomsup Kim

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
  • fYear
    1998
  • fDate
    11-13 June 1998
  • Firstpage
    28
  • Lastpage
    29
  • Abstract
    This paper presents a low noise 900 MHz voltage controlled oscillator (VCO) implemented in 0.6 /spl mu/m CMOS technology. The VCO based on a 4-stage ring oscillator adopted a new differential delay cell to reduce the phase noise. The measured phase noise is -101 dBc/Hz at 100 kHz offset from the center frequency and comparable to that of LC based integrated oscillators. The measured value is smaller than any other previously reported ones in the ring oscillator VCO´s. A prototype frequency synthesizer with this VCO shows phase noise of -117 dBc/Hz at 100 kHz offset. The VCO operates from 750 MHz to 1.2 GHz with a single 3 volt power supply.
  • Keywords
    CMOS analogue integrated circuits; UHF integrated circuits; UHF oscillators; integrated circuit noise; phase noise; voltage-controlled oscillators; 0.6 micron; 3 V; 4-stage ring oscillator; 750 MHz to 1.2 GHz; 900 MHz; CMOS technology; differential delay cell; low-noise VCO; phase noise reduction; prototype frequency synthesizer; voltage controlled oscillator; CMOS technology; Delay; Frequency measurement; Frequency synthesizers; Noise measurement; Phase measurement; Phase noise; Prototypes; Ring oscillators; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 1998. Digest of Technical Papers. 1998 Symposium on
  • Conference_Location
    Honolulu, HI, USA
  • Print_ISBN
    0-7803-4766-8
  • Type

    conf

  • DOI
    10.1109/VLSIC.1998.687991
  • Filename
    687991