Title :
A 69 μW CMOS smart temperature sensor with an inaccuracy of ±0.8°C (3σ) from −50°C to 150°C
Author :
Sheng-Cheng Lee ; Herming Chiueh
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A proposed temperature sensor is based on pure CMOS PTAT circuitry, a preamplifier and a sigma delta ADC capable of simple and efficient temperature sensor conversion to digital value. The designed PTAT circuit utilized temperature compensation technology to enhance the linearity. The temperature sensor, which occupies 0.475 mm2, is fabricated using the TSMC 0.18 μm one-poly six-metal (1P6M) process. Measurement results show that the senor consume 46uA with a 1.5 V supply at 100 sample/s at room temperature. The sensor operates from -50°C to 150°C, archiving a 3σ resolution of ±0.8°C.
Keywords :
CMOS integrated circuits; compensation; intelligent sensors; preamplifiers; sigma-delta modulation; temperature measurement; temperature sensors; 1P6M process; CMOS PTAT circuitry; CMOS smart temperature sensor; TSMC one-poly six-metal process; current 46 muA; power 69 muW; preamplifier; sigma delta ADC; size 0.18 mum; temperature -50 degC to 150 degC; temperature 293 K to 298 K; temperature compensation technology; voltage 1.5 V; CMOS integrated circuits; CMOS technology; Modulation; Noise; Sigma delta modulation; Temperature measurement; Temperature sensors;
Conference_Titel :
Sensors, 2012 IEEE
Conference_Location :
Taipei
Print_ISBN :
978-1-4577-1766-6
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2012.6411595
