• DocumentCode
    2954933
  • Title

    Growth and characterization of Si-based light-emitting diode with β-FeSi2 active region by molecular beam epitaxy

  • Author

    Suemasu, T. ; Takauji, M. ; Sunohara, T. ; Li, C. ; Hasegawa, F.

  • Author_Institution
    Inst. of Appl. Phys., Tsukuba Univ., Ibaraki, Japan
  • fYear
    2004
  • fDate
    29 Sept.-1 Oct. 2004
  • Firstpage
    7
  • Lastpage
    9
  • Abstract
    Si p-n junction light-emitting diodes with β-FeSi2 particles and with a β-FeSi2 continuous film active region were grown on Si(001) and Si(111) substrates, respectively, by molecular beam epitaxy and the electroluminescence properties were investigated.
  • Keywords
    electroluminescence; elemental semiconductors; iron compounds; light emitting diodes; molecular beam epitaxial growth; p-n junctions; semiconductor epitaxial layers; semiconductor growth; silicon; Si; Si p-n junction; Si(001) substrate; Si(111) substrate; Si-FeSi2; Si-based LED; beta-FeSi2 active region; beta-FeSi2 particles; continuous film active region; electroluminescence; film characterization; film growth; light-emitting diode; molecular beam epitaxy; Annealing; Crystalline materials; DH-HEMTs; Lattices; Light emitting diodes; Molecular beam epitaxial growth; P-n junctions; Physics; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2004. First IEEE International Conference on
  • Print_ISBN
    0-7803-8474-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2004.1416635
  • Filename
    1416635
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2954933