Title :
Growth and characterization of Si-based light-emitting diode with β-FeSi2 active region by molecular beam epitaxy
Author :
Suemasu, T. ; Takauji, M. ; Sunohara, T. ; Li, C. ; Hasegawa, F.
Author_Institution :
Inst. of Appl. Phys., Tsukuba Univ., Ibaraki, Japan
fDate :
29 Sept.-1 Oct. 2004
Abstract :
Si p-n junction light-emitting diodes with β-FeSi2 particles and with a β-FeSi2 continuous film active region were grown on Si(001) and Si(111) substrates, respectively, by molecular beam epitaxy and the electroluminescence properties were investigated.
Keywords :
electroluminescence; elemental semiconductors; iron compounds; light emitting diodes; molecular beam epitaxial growth; p-n junctions; semiconductor epitaxial layers; semiconductor growth; silicon; Si; Si p-n junction; Si(001) substrate; Si(111) substrate; Si-FeSi2; Si-based LED; beta-FeSi2 active region; beta-FeSi2 particles; continuous film active region; electroluminescence; film characterization; film growth; light-emitting diode; molecular beam epitaxy; Annealing; Crystalline materials; DH-HEMTs; Lattices; Light emitting diodes; Molecular beam epitaxial growth; P-n junctions; Physics; Substrates; Temperature;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416635
