Title :
New IR semiconductors in the Si-Ge-Sn system
Author :
Kouvetakis, J. ; Tolle, J. ; Menendez, Jose
Author_Institution :
Dept. of Chem., Arizona State Univ., Tempe, AZ, USA
fDate :
29 Sept.-1 Oct. 2004
Abstract :
We will discuss CVD growth, characterization and properties of novel Ge1-zSnz/Ge1-x-ySixSny heterostructures on Si(100). The Ge1-x-ySixSny system provides independent strain and bandgap engineering to achieve structures that may lead to novel photonic group-IV devices.
Keywords :
Ge-Si alloys; chemical vapour deposition; energy gap; infrared spectra; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; semiconductor materials; tin alloys; CVD growth; IR semiconductors; Si(100); Si-Ge-Sn system; SiGeSn; bandgap engineering; independent strain engineering; photonic group-IV devices; semiconductor heterostructure characterization; semiconductor heterostructure properties; Buffer layers; Capacitive sensors; Germanium silicon alloys; Lattices; Optical films; Photonic band gap; Reliability engineering; Silicon germanium; Surface morphology; Tin;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416651
