• DocumentCode
    2955351
  • Title

    Intense room temperature near infrared emission from Al3+ and Yb3+ ions co-implanted SiO2 film on silicon

  • Author

    Zhang, J.G. ; Cheng, B.W. ; Gao, J.H. ; Yu, J.Z. ; Wang, Q.M.

  • Author_Institution
    Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
  • fYear
    2004
  • fDate
    29 Sept.-1 Oct. 2004
  • Firstpage
    64
  • Lastpage
    66
  • Abstract
    Intense near infrared emission was observed from Al3+ and Yb3+ ions co-implanted SiO2 film on silicon. It was found that the addition of Al3+ ions could remarkably improve the photoluminescence efficiency of Yb3+-implanted SiO2 film. No excitation power saturation was observed and trivial temperature quenching factor of 2 was achieved.
  • Keywords
    aluminium; infrared spectra; photoluminescence; silicon compounds; thin films; ytterbium; 20 degC; Al3+ ions; Si; SiO2:Al,Yb; Yb3+ ions; coimplanted SiO2 film; intense room temperature emission; near infrared emission; photoluminescence; trivial temperature quenching factor; Annealing; Laser excitation; Optical films; Optical pumping; Optical saturation; Optical sensors; Particle beam optics; Semiconductor films; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2004. First IEEE International Conference on
  • Print_ISBN
    0-7803-8474-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2004.1416654
  • Filename
    1416654
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2955351