Title :
Compositional and optical characterization of SiOx films deposited by ECR-PECVD for photonics applications
Author :
Flynn, M. ; Irving, E. ; Roschuk, T. ; Wojcik, J. ; Mascher, P.
Author_Institution :
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
fDate :
29 Sept.-1 Oct. 2004
Abstract :
Thin SiOx films were deposited using ECR-PECVD. The composition and structure of the samples was determined using Rutherford backscattering and Fourier transform infrared spectroscopy while photoluminescence and ellipsometric measurements were used to characterize the samples optically. AFM measurements confirmed the presence of silicon nanocrystals after annealing the samples. These materials have the potential to he used in a variety of applications, including rare-earth doping, as well as their applicability to optical coatings because of the large achievable range of refractive indices.
Keywords :
Fourier transform spectra; Rutherford backscattering; annealing; atomic force microscopy; ellipsometry; infrared spectra; nanostructured materials; optical films; photoluminescence; plasma CVD; refractive index; silicon compounds; thin films; AFM measurements; ECR-PECVD; Fourier transform infrared spectroscopy; Rutherford backscattering; SiO2; SiOx films; annealing; compositional characterization; ellipsometric measurements; film deposition; optical characterization; optical coatings; photoluminescence; photonics applications; rare-earth doping; refractive indices; silicon nanocrystals; Annealing; Backscatter; Fourier transforms; Infrared spectra; Nanocrystals; Optical films; Optical refraction; Optical variables control; Photoluminescence; Silicon;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416656
